EMB03P03H Overview
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
EMB03P03H datasheet by Excelliance MOS.
| Part number | EMB03P03H |
|---|---|
| Datasheet | EMB03P03H-ExcellianceMOS.pdf |
| File Size | 339.08 KB |
| Manufacturer | Excelliance MOS |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
|
|
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB03P03A | MOSFET |
| EMB03K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB03N03A | MOSFET |
| EMB03N03H | MOSFET |
| EMB03N03HR | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB03N03V | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB03N06HS | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02N03HR | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB02N03HS | MOSFET |