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EMB03P03H - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Description

P-CH BVDSS -30V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 3.1mΩ 5.0mΩ -222A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source

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Datasheet Details

Part number EMB03P03H
Manufacturer Excelliance MOS
File Size 339.08 KB
Description Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB03P03H Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: P-CH BVDSS -30V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 3.1mΩ 5.0mΩ -222A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4 TC = 25 °C TC = 100 °C TA= 25 °C TA= 70 °C L = 0.1mH L = 0.
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