EMB03P03H Datasheet | Excelliance MOS

Description : P-CH BVDSS -30V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 3.1mΩ 5.0mΩ -222A Single P Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4 TC = 25 °C TC = 100 °C TA= 25 °C TA= 70 °C L = 0.1m H L = 0.05m H Power Dissipation1 Power Dissipation1 TC = 25 °C TC = 100 °C TA= 25 °C TA= 70 °C Operating Junction & Storage Temperature Range IDM IAS EAS EAR PD PD Tj, Tstg - 100% UIS testing in condition of VD=25V, L=0.1m H, VG=10V, IL=-50A, Rated VDS=30V P-CH - THERMAL RESISTANCE RATINGS ±20 -222 -140 -22 -18 -331 -80 320 160 250 100 2.5 1.6 -55 to 150 THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC Junction-to-Ambient3 t≦10s Steady-State RθJA RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 4Guarantee by Engineering test 2025/5/29 0.5 16.4...