EMB06N06H Overview
EMB06N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 3Pulsed drain current rating is package limited. Pulse Width 300 sec, Duty Cycle 2％.
EMB06N06H Details
| Part number | EMB06N06H |
|---|---|
| Datasheet | EMB06N06H-ExcellianceMOS.pdf |
| File Size | 205.30 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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