EMB06N06HS Datasheet | Excelliance MOS

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 5.2mΩ 7.5mΩ ID@TC=25°C 77A Single N Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1m H Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 -55 to 150 100% UIS testing in condition of VD=30V, L=0.1m H, VG=10V, IL=15A, Rated VDS=60V N-CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RJC Junction-to-Ambient3...