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EMB06N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMB06N03HR
Manufacturer Excelliance MOS
File Size 332.26 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 75A G EMB06N03HR UIS, Rg 100% Tested S RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C 95 TA = 25 °C ID 19 Pulsed Drain Current1 TC = 100 °C 60 IDM 160 Avalanche Current IAS 53 Avalanche Energy L = 0.1mH, IAS=53A, RG=25Ω EAS 140 Repetitive Avalanche Energy2 L = 0.05mH EAR 40 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 -55 to 150 100% UIS testing in condition of VD=10V, L=0.
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