Datasheet Details
| Part number | EMB06N03V |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 417.25 KB |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download | EMB06N03V Download (PDF) |
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| Part number | EMB06N03V |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 417.25 KB |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download | EMB06N03V Download (PDF) |
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: N-CH BVDSS 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 6.0mΩ 9.5mΩ 44A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current1 Avalanche Current1,4 Avalanche Energy1,4 Repetitive Avalanche Energy2,4 TC = 25 °C TA = 25 °C TC = 100 °C L = 0.1mH L = 0.05mH Power Dissipation1 TC = 25 °C TC = 100 °C Power Dissipation1 TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD PD Tj, Tstg ±20 44 15 29 74 37 68 34.2 20.8 8.3 2.3 1.5 -55 to 150 ▪100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=22A, Rated VDS=30V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 6 Junction-to-Ambient3 RθJA 55 1Pulse width limited by maximum junction temperature.
2Duty cycle ≦ 1％ 355°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test UNIT V A mJ W W ℃ UNIT °C / W 2020/6/29 P.1 A.2 EMB06N03V ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 30 VDS = VGS, ID = 250uA 1.2 VDS = 0V, VGS = ±20V VDS = 30V, VGS = 0V VDS =30V, VGS =0V, TJ = 125 °C VDS = 10V, VGS = 10V 44 VGS = 10V, ID = 14A VGS = 4.5V, ID = 10A VDS = 5V, ID = 14A DYNAMIC Input Capacitance5 Output Capacitance5 Reverse Transfer Capacitance5 Gate Resistance4,5 Total Gate Charge1,2,5 Gate-Source Charge1,2,5 Gate-Drain
EMB06N03V Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part Number | Description |
|---|---|
| EMB06N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03E | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03GH | MOSFET |
| EMB06N03H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| EMB06N06CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06HS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |