| Part number | EMB06N03E |
|---|---|
| Datasheet | EMB06N03E-ExcellianceMOS.pdf |
| File Size | 250.90 KB |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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EMB06N03E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
See all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB06N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03GH | MOSFET |
| EMB06N03H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N03V | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06CS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06H | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB06N06HS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
