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EMB06N03A - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Part number EMB06N03A
Manufacturer Excelliance MOS
File Size 918.77 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 70A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 TC = 25 °C 70 Continuous Drain Current ID TC = 100 °C 45 Pulsed Drain Current1 IDM 280 Avalanche Current IAS 40 Avalanche Energy L = 0.1mH EAS 80 Repetitive Avalanche Energy2 L = 0.05mH EAR 40 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 -55 to 150 100% UIS testing in condition of VD=15V, L=0.
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