EMB12K03GP Description
Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2％.
- Part: EMB12K03GP
- Manufacturer: Excelliance MOS
- Size: 216.17 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMB12K03V | MOSFET |
| EMB12N03A | MOSFET |
| EMB12N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03H | MOSFET |
| EMB12N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |