EMB12K03V Description
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: VDS = 15V, VGS = 10V, Q1 ID = 12A Q2 Qg(VGS=4.5V) Q2: Pulse Width 300 sec, Duty Cycle 2％.
- Part: EMB12K03V
- Manufacturer: Excelliance MOS
- Size: 202.90 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMB12K03GP | MOSFET |
| EMB12N03A | MOSFET |
| EMB12N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03H | MOSFET |
| EMB12N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |