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EMB12P03G - P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMB12P03G
Manufacturer Excelliance MOS
File Size 345.40 KB
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB12P03G Datasheet

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EMB12P03G P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.)(VGS=-10V) 10mΩ ID -13A P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C -13 ID -10 IDM -50 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 IAS L = 0.1mH, ID=-15A, RG=25Ω EAS L = 0.05mH EAR -15 11.25 5.62 TA = 25 °C Power Dissipation PD TA = 100 °C Operating Junction & Storage Temperature Range Tj, Tstg 100% UIS testing in condition of VD=-15V, L=0.
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