Datasheet Details
| Part number | EMB12P04H |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 459.48 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
 EMB12P04H Datasheet
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| Part number | EMB12P04H |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 459.48 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
EMB12P04H Datasheet
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: P-CH BVDSS -40V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 14mΩ 22mΩ -45A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate-Source Voltage VGS ±20 V Continuous Drain Current1 TC = 25 °C TC = 100 °C ID -45 -28 Pulsed Drain Current1 IDM -153 A Avalanche Current1 IAS -50 Avalanche Energy1 Repetitive Avalanche Energy2 L = 0.1mH EAS L = 0.05mH EAR 125 62.5 mJ Power Dissipation1 TC = 25 °C TC = 100 °C PD 50 20 W Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ℃ ▪100% UIS testing in condition of VD=-25V, L=0.1mH, VG=10V, IL=25A, Rated VDS=-40V P-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient3 SYMBOL RθJC RθJA TYPICAL 1Pulse width limited by maximum junction temperature.
2Duty cycle ≦ 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper.
MAXIMUM 2.5 50 UNIT °C / W 2019/11/21 P.1 EMB12P04H ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 gfs VGS = 0V, ID = -250uA -40 VDS = VGS, ID = -250uA -1 VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V -45 VGS = -10V, ID = -20A VGS = -4.5V, ID = -12A VDS = -5V, ID = -20A DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate-Source Charge1,2 Gate-Drain Charge1,2 Turn-On Delay Time1,2 Rise Time1,2 Turn-Off Delay Time1,2 Fall Time1,2 C
EMB12P04H Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part Number | Description |
|---|---|
| EMB12P04A | MOSFET |
| EMB12P04F | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12P04V | MOSFET |
| EMB12P03A | MOSFET |
| EMB12P03G | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12P03H | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12P03V | MOSFET |
| EMB12K03GP | MOSFET |
| EMB12K03V | MOSFET |
| EMB12N03A | MOSFET |