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EMB12P04F - Single P-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

BVDSS -40V RDSON (MAX.) 12.6mΩ ID -25A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 VGS TC

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Datasheet Details

Part number EMB12P04F
Manufacturer Excelliance MOS
File Size 353.98 KB
Description Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB12P04F Datasheet

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EMB12P04F Single P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS -40V RDSON (MAX.) 12.6mΩ ID -25A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 VGS TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, ID=-25A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg LIMITS ±20 -25 -18 -100 -25 31.
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