Datasheet Details
| Part number | EMB12P04F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 353.98 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
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EMB12P04F Download (PDF)
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| Part number | EMB12P04F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 353.98 KB |
| Description | Single P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Download |
EMB12P04F Download (PDF)
|
|
|
|
: BVDSS -40V RDSON (MAX.) 12.6mΩ ID -25A Single P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 VGS TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, ID=-25A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg LIMITS ±20 -25 -18 -100 -25 31.25 15 50 20 -55 to 150 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.
2Duty cycle 1％ 3Pulsed drain current rating is package limited.
2022/12/19 TYPICAL MAXIMUM 2.5 75 UNIT °C / W p.1 EMB12P04F ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V VGS = -10V, ID = -25A VGS = -5V, ID = -20A VDS = -5V, ID = -25A DYNAMIC -40 V -1.0 -1.8 -3.2 ±100 nA -1 A -25 -25 A 11.3 12.6 mΩ 18 23 28 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate-Source Charge1,2 Gate-Drain Charge1,2 Turn-On Delay Time1,2 Rise Time1,2 Turn-Off Delay Time1,2 Fall Time1,2 Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, VDS = -20V, f = 1MHz
EMB12P04F Single P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary:.
| Part Number | Description |
|---|---|
| EMB12P04A | MOSFET |
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