EMB16N06V datasheet by Excelliance MOS.
| Part number | EMB16N06V |
|---|---|
| Datasheet | EMB16N06V-ExcellianceMOS.pdf |
| File Size | 202.94 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
|
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
View EMB16N06G datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
EMB16N06G | N-Channel Trench Power MOSFET | Kexin |
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB16N06A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB16N06CS | MOSFET |
| EMB16N06G | MOSFET |
| EMB16N06H | MOSFET |
| EMB16P04A | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB16P04V | MOSFET |
| EMB11A03G | MOSFET |
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| EMB12K03V | MOSFET |
| EMB12N03A | MOSFET |
