EMB16N06G datasheet by Excelliance MOS.
| Part number | EMB16N06G |
|---|---|
| Datasheet | EMB16N06G-ExcellianceMOS.pdf |
| File Size | 207.80 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
|
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
View EMB16N06G datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
EMB16N06G | N-Channel Trench Power MOSFET | Kexin |
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB16N06A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| EMB16N06V | MOSFET |
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| EMB16P04V | MOSFET |
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