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EMB16N06G - N-Channel Trench Power MOSFET

Features

  • ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage ˄VGS=0V˅ Gate-Source Voltage ˄VDS=0V˅ Continuous Drain Current Pulsed Drain Current TC=25ć TC=100ć Power Dissipation Thermal Resistance. Junction- to-Abmient Junction Temperature Storage Temperature Range TC=25ć TC=100ć Symbol VDS VGS ID IDM P.

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Datasheet Details

Part number EMB16N06G
Manufacturer Kexin
File Size 44.97 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet EMB16N06G Datasheet
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    SMD Type N-Channel Trench Power MOSFET EMB16N06G MOSFET Ƶ Features ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage ˄VGS=0V˅ Gate-Source Voltage ˄VDS=0V˅ Continuous Drain Current Pulsed Drain Current TC=25ć TC=100ć Power Dissipation Thermal Resistance.Junction- to-Abmient Junction Temperature Storage Temperature Range TC=25ć TC=100ć Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 60 ±20 20 14 80 2.5 1.6 50 150 -55 to 150 Unit V A W ć/W ć www.kexin.com.
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