EMB16N06G Datasheet | Kexin Semiconductor

Features ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage ˄VGS=0V˅ Gate-Source Voltage ˄VDS=0V˅ Continuous Drain Current Pulsed Drain Current TC=25ć TC=100ć Power Dissipation Thermal Resistance.Junction- to-Abmient Junction Temperature Storage Temperature Range TC=25ć TC=100ć Symbol VDS VGS Rth JA TJ Tstg Rating 60 ±20 20 14 80 2.5 1.6 50 150 -55 to 150 Unit V W ć/W ć .kexin..cn 1 SMD Type N-Channel Trench Power MOSFET EMB16N06G MOSFET Ƶ Electrical Characteristics Ta = 25ć Parameter Drain-Source Breakdown Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance...