EMB16N06G Datasheet
EMB16N06G Datasheet (Excelliance MOS)
Excelliance MOS
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 16mΩ ID 6.7A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE .
RAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs STA.
EMB16N06G Datasheet (Kexin Semiconductor)
Kexin Semiconductor
SMD Type N-Channel Trench Power MOSFET EMB16N06G MOSFET Ƶ Features ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain.
ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage ˄VGS=0V˅ Gate-Source Voltage ˄VDS=0V˅ Continuo.