EMB17A03H Description
EMB17A03H Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2％.
- Part: EMB17A03H
- Manufacturer: Excelliance MOS
- Size: 215.89 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMB17A03G | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB17A03V | Dual N-Channel MOSFET |
| EMB17C03G | N & P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB17N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB11A03G | MOSFET |