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EMB17A03H - MOSFET

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Part number EMB17A03H
Manufacturer Excelliance MOS
File Size 215.89 KB
Description MOSFET
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EMB17A03H Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 17mΩ ID 16A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 16 ID TC = 100 °C 10 IDM 64 Avalanche Current IAS 16 Avalanche Energy L = 0.1mH, ID=10A, RG=25Ω EAS 5 Repetitive Avalanche Energy2 L = 0.05mH EAR 2.5 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 25 10 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.
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