EMBA3P03JS - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMBA3P03JS
Manufacturer	Excelliance MOS
File Size	835.52 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMBA3P03JS Datasheet

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 125mΩ ID -3.1A P-Channel MOSFET Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C IDM Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMBA3P03JS LIMITS ±20 -3.1 -2.1 -12 1.04 0.66 -55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient3 RJA (T ≤ 10sec) RJA (Steady State) 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 3The device mounted on a 1 in2 pad of 2 oz copper.

Published: Apr 27, 2017 |