EMBA3P03JS Datasheet | Excelliance MOS

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 125mΩ -3.1A P-Channel MOSFET Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg LIMITS ±20 -3.1 -2.1 -12 1.04 0.66 -55 to 150 UNIT V W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient3 RJA (T ≤ 10sec) RJA (Steady State) 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 3The device mounted on a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 83 120 UNIT °C / W 2019/01/24 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL...