Datasheet4U Logo Datasheet4U.com

EMBA5P06J - P-Channel Logic Level Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet Details

Part number EMBA5P06J
Manufacturer Excelliance MOS
File Size 168.64 KB
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMBA5P06J Datasheet

📁 Similar Datasheet

  • EMB09P03A - P-Channel 30V MOSFET (VBsemi)
  • EMB10 - PNP Digital Transistors (Rohm)
  • EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
  • EMB11 - Dual Digital Transistors (Rohm)
  • EMB11 - Dual Digital Transistors (JCET)
  • EMB1412 - EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)
  • EMB1428Q - EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)
  • EMB1432Q - EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)
  • EMB1433Q - EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)
  • EMB1499Q - EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) (ETCTI)
Other Datasheets by Excelliance MOS

Full PDF Text Transcription

Click to expand full text
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -60V RDSON (MAX.) 150mΩ ID -2.2A G S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C IDM Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMBA5P06J LIMITS ±20 -2.2 -1.4 -8.8 1.25 0.8 -55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RθJA 100 Junction-to-Lead4 RθJL 55 1Pulse width limited by maximum junction temperature.
Published: |