EMD04N06A - N?Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMD04N06A
Manufacturer	Excelliance MOS
File Size	218.50 KB
Description	N?Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMD04N06A Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMD04N06E	N?Channel Logic Level Enhancement Mode Field Effect Transistor
EMD04N06F	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMD04N06FN	N?Channel Logic Level Enhancement Mode Field Effect Transistor
EMD04N06H	N?Channel Logic Level Enhancement Mode Field Effect Transistor
EMD04N04E	MOSFET

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EMD04N06A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.8mΩ ID 80A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=80A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 80 50 170 80 320 160 69 27 ‐55 to 150 100% UIS testing in condition of VD=30V, L=0.

Published: Apr 26, 2017 |