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EMD04N06F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

BVDSS 60V RDSON (MAX.) 5mΩ ID 75A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free EMD04N06F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulse

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Datasheet Details

Part number EMD04N06F
Manufacturer Excelliance MOS
File Size 359.95 KB
Description Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMD04N06F Datasheet

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 60V RDSON (MAX.) 5mΩ ID 75A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free EMD04N06F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 75 ID TC = 100 °C 45 IDM 160 Avalanche Current IAS 70 Avalanche Energy L = 0.1mH, ID=70A, RG=25Ω EAS 245 Repetitive Avalanche Energy2 L = 0.05mH EAR 122 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 -55 to 150 100% UIS testing in condition of VD=30V, L=0.
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