Datasheet Details
| Part number | EMD04N06F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 359.95 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD04N06F-ExcellianceMOS.pdf |
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Overview: Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary:.
| Part number | EMD04N06F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 359.95 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD04N06F-ExcellianceMOS.pdf |
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: BVDSS 60V RDSON (MAX.) 5mΩ ID 75A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free EMD04N06F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 75 ID TC = 100 °C 45 IDM 160 Avalanche Current IAS 70 Avalanche Energy L = 0.1mH, ID=70A, RG=25Ω EAS 245 Repetitive Avalanche Energy2 L = 0.05mH EAR 122 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 -55 to 150 100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=40A, Rated VDS=60V N-CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.
2Duty cycle 1％ 3Pulsed drain current rating is package limited.
TYPICAL MAXIMUM 2.5 65 UNIT V A mJ W °C UNIT °C / W 2022/12/19 p.1 EMD04N06F ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V VGS = 10V, ID = 20A VDS = 5V, ID = 20A DYNAMIC 60 V 23 4 ±100 nA 1 A 25 75 A 4.6 5.0 mΩ 55 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate-Source Charge1,2 Gate-Drain Charge1,2 Turn-On Delay Time1,2 Rise Time1,2 Turn-Off Delay Time1,2 Fall Time1,2 Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off)
| Part Number | Description |
|---|---|
| EMD04N06FN | N?Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD04N06A | N?Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD04N06E | N?Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD04N06H | N?Channel Logic Level Enhancement Mode Field Effect Transistor |
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| EMD04N10E | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD04N60AB | MOSFET |