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EMD04N06E - N?Channel Logic Level Enhancement Mode Field Effect Transistor

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Datasheet Details

Part number EMD04N06E
Manufacturer Excelliance MOS
File Size 248.54 KB
Description N?Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMD04N06E Datasheet

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EMD04N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.8mΩ ID 155A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, IAS=80A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 155 110 540 80 320 160 227 73 ‐55 to 150 100% UIS testing in condition of VD=30V, L=0.
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