EMD04N08E - N?Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMD04N08E
Manufacturer	Excelliance MOS
File Size	247.27 KB
Description	N?Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMD04N08E Datasheet

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Other Datasheets by Excelliance MOS

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EMD04N08FN	N?Channel Logic Level Enhancement Mode Field Effect Transistor
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EMD04N08E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 4.6mΩ ID 160A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, IAS=90A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±30 160 126 540 90 405 202 250 100 ‐55 to 150 100% UIS testing in condition of VD=30V, L=0.

Published: Apr 26, 2017 |