EMD10N06E datasheet by Excelliance MOS.
| Part number | EMD10N06E |
|---|---|
| Datasheet | EMD10N06E-ExcellianceMOS.pdf |
| File Size | 225.85 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
|
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EMD10N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMD10N06A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD10N70F | MOSFET |
| EMD11N15E | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD11N15F | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD12N06A | MOSFET |
| EMD12N06H | MOSFET |
| EMD12N10E | MOSFET |
| EMD12N10H | MOSFET |
| EMD12N60F | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMD14N10CS | MOSFET |
