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EMD12N10E - MOSFET

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Part number EMD12N10E
Manufacturer Excelliance MOS
File Size 225.17 KB
Description MOSFET
Datasheet download datasheet EMD12N10E Datasheet
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EMD12N10E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 11.5mΩ ID 95A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=90A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±30 95 67 280 90 405 202 166 66 ‐55 to 150 100% UIS testing in condition of VD=50V, L=0.
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