Datasheet4U Logo Datasheet4U.com

EMD12N10H - MOSFET

📥 Download Datasheet

Datasheet preview – EMD12N10H

Datasheet Details

Part number EMD12N10H
Manufacturer Excelliance MOS
File Size 210.98 KB
Description MOSFET
Datasheet download datasheet EMD12N10H Datasheet
Additional preview pages of the EMD12N10H datasheet.

📁 Similar Datasheet

  • EMD12 - Power management (dual digital transistors) (Rohm)
  • EMD12 - Dual Digital Transistors (JCET)
  • EMD12 - General purpose transistors (Jin Yu Semiconductor)
  • EMD10 - Dual Digital Transistors (JCET)
  • EMD1S - MINI SUPER FAST SURFACE MOUNT BRIDGE RECTIFIER (Rectron)
  • EMD2 - General purpose (dual digital transistors) (Rohm)
  • EMD2 - Dual Digital Transistors (JCET)
  • EMD2050 - PWM Step-Up DC/DC Converter (ESMT)
  • EMD2055 - PWM Step-Up DC/DC Converter (Elite Semiconductor)
  • EMD2080 - Constant Current LED Lighting Driver (Elite Semiconductor)
Other Datasheets by Excelliance MOS

Full PDF Text Transcription

Click to expand full text
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 12mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=50A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature.
Published: |