Datasheet Details
| Part number | EMD50N15F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 358.88 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD50N15F-ExcellianceMOS.pdf |
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Overview: EMD50N15F Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary:.
| Part number | EMD50N15F |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 358.88 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD50N15F-ExcellianceMOS.pdf |
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: BVDSS 150V RDSON (MAX.) 50mΩ ID 22A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.2mH, ID=18A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.1mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.
2Duty cycle 1％ 3Pulsed drain current rating is package limited.
2022/12/19 LIMITS 150 ±30 22 13 88 18 32.4 16.2 35 14 -55 to 150 UNIT V V A mJ W °C MAXIMUM 3.5 62.5 UNIT °C / W p.1 EMD50N15F ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 20A VDS = 5V, ID = 20A DYNAMIC 150 V 1.5 2.5 4.0 ±100 nA 1 A 25 22 A 40 50 mΩ 40 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate-Source Charge1,2 Gate-Drain Charge1,2 Turn-On Delay Time1,2 Rise Time1,2 Turn-Off Delay Time1,2 Fall Time1,2 Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, VDS = 25V, f = 1MHz VGS = 15mV, VDS
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