EMD60N10F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

General Description

BVDSS 100V RDSON (MAX.) 60mΩ ID 20A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC =

📥 Download Datasheet

EMD60N10F single n-channel logic level enhancement mode field effect transistor by Excelliance MOS - Datasheet Preview

Datasheet Details

Part number	EMD60N10F
Manufacturer	Excelliance MOS
File Size	372.45 KB
Description	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMD60N10F Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
EMD6	NPN + PNP Complex Digital Transistors	Rohm
EMD6	Digital Transistors	JCET
EMD62	Complex Digital Transistors	ROHM
EMD6FHA	Dual digital transistor	ROHM
EMD10	Dual Digital Transistors	JCET

Other Datasheets by Excelliance MOS

Part Number	Description
EMD60N10A	MOSFET
EMD60N15A	N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMD60N15E	N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMD60N15F	N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMD60N15G	N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 100V RDSON (MAX.) 60mΩ ID 20A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, ID=20A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.