Datasheet4U Logo Datasheet4U.com

EMD60N15F - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

BVDSS 150V RDSON (MAX.) 60mΩ ID 20A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGS Continuous Drain Current

📥 Download Datasheet

Datasheet preview – EMD60N15F

Datasheet Details

Part number EMD60N15F
Manufacturer Excelliance MOS
File Size 361.77 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMD60N15F Datasheet
Additional preview pages of the EMD60N15F datasheet.

📁 Similar Datasheet

  • EMD6 - NPN + PNP Complex Digital Transistors (Rohm)
  • EMD6 - Digital Transistors (JCET)
  • EMD62 - Complex Digital Transistors (ROHM)
  • EMD6FHA - Dual digital transistor (ROHM)
  • EMD10 - Dual Digital Transistors (JCET)
  • EMD12 - Power management (dual digital transistors) (Rohm)
  • EMD12 - Dual Digital Transistors (JCET)
  • EMD12 - General purpose transistors (Jin Yu Semiconductor)
  • EMD1S - MINI SUPER FAST SURFACE MOUNT BRIDGE RECTIFIER (Rectron)
  • EMD2 - General purpose (dual digital transistors) (Rohm)
Other Datasheets by Excelliance MOS
  • EMD60N15A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMD60N15E - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMD60N15G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMD60N10A - MOSFET
  • EMD60N10F - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMD02N06E - MOSFET
  • EMD02N06TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMD02N10TL8 - Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 150V RDSON (MAX.) 60mΩ ID 20A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.2mH, ID=18A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.1mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMD60N15F LIMITS 150 ±30 20 12 80 18 32.4 16.
Published: |