EMD60N15F - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

General Description

BVDSS 150V RDSON (MAX.) 60mΩ ID 20A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGS Continuous Drain Current

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EMD60N15F n-channel logic level enhancement mode field effect transistor by Excelliance MOS - Datasheet Preview

Datasheet Details

Part number	EMD60N15F
Manufacturer	Excelliance MOS
File Size	361.77 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMD60N15F Datasheet

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 150V RDSON (MAX.) 60mΩ ID 20A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.2mH, ID=18A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.1mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMD60N15F LIMITS 150 ±30 20 12 80 18 32.4 16.