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N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
150V
RDSON (MAX.)
60mΩ
ID
23A
N Channel MOSFET
UIS, Rg 100% Tested
Pb-Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C ID
TC = 100 °C
IDM
Avalanche Current
IAS
Avalanche Energy
L = 0.1mH
EAS
Repetitive Avalanche Energy2
L = 0.05mH
EAR
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
EMD60N15A
LIMITS 150 ±30 23 14 92 25 31.2 15.