EMF09P02A - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF09P02A
Manufacturer	Excelliance MOS
File Size	202.96 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF09P02A Datasheet
Additional preview pages of the EMF09P02A datasheet.

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Full PDF Text Transcription

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 9mΩ ID ‐62A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐25A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg EMF09P02A LIMITS ±8 ‐62 ‐41 ‐150 ‐25 62.5 31.

Published: Apr 27, 2017 |