EMF09P02V - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF09P02V
Manufacturer	Excelliance MOS
File Size	879.44 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF09P02V Datasheet
Additional preview pages of the EMF09P02V datasheet.

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Full PDF Text Transcription

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -20V RDSON (MAX.) 9.5mΩ ID -24A P-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current ID TA= 25 °C(t≦10s) TA= 25 °C(Steady-State) TC = 100 °C Pulsed Drain Current1 IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS=-15A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.

Published: Apr 26, 2017 |