EMF20B02G - MOSFET

Excelliance MOS

Datasheet Details

Part number	EMF20B02G
Manufacturer	Excelliance MOS
File Size	188.30 KB
Description	MOSFET
Datasheet	EMF20B02G Datasheet
Additional preview pages of the EMF20B02G datasheet.

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐20V RDSON (MAX.) 20mΩ ID ‐8.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMF20B02G LIMITS ±12 ‐8.5 ‐6 ‐34 2 1.28 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 25 62.

Published: Apr 26, 2017 |