EMF30N02JS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF30N02JS
Manufacturer	Excelliance MOS
File Size	186.49 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF30N02JS Datasheet
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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 20V RDSON (MAX.) 30mΩ ID 5A G N Channel MOSFET S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C IDM Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg EMF30N02JS PIN1 LIMITS ±12 5 3.6 20 1.04 0.66 -55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient3 RθJA (T ≤ 10sec) RθJA (Steady State) 1Pulse width limited by maximum junction temperature.

Published: Apr 26, 2017 |