EMF30N02P - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF30N02P
Manufacturer	Excelliance MOS
File Size	212.60 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF30N02P Datasheet
Additional preview pages of the EMF30N02P datasheet.

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 30mΩ ID 5A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMF30N02P LIMITS ±12 5 3.75 20 1.47 0.94 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 385°C / W when mounted on a 1 in2 pad of 2 oz copper.

Published: Apr 26, 2017 |