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EMF30C02G - MOSFET

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Part number EMF30C02G
Manufacturer Excelliance MOS
File Size 265.06 KB
Description MOSFET
Datasheet download datasheet EMF30C02G Datasheet
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 20V ‐20V RDSON (MAX.) 30.5mΩ 100mΩ ID 6.5A ‐4.2A EMF30C02G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM PD Tj, Tstg LIMITS N‐CH P‐CH ±12 ±12 6.5 ‐4.2 4.5 ‐3.3 26 ‐16.8 2 0.8 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 362.
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