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EMF30N02H - MOSFET

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Part number EMF30N02H
Manufacturer Excelliance MOS
File Size 218.22 KB
Description MOSFET
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 30mΩ ID 10A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMF30N02H LIMITS ±12 10 7 40 25 16 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 362°C / W when mounted on a 1 in2 pad of 2 oz copper.
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