EMF30N02A Overview
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 362°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
EMF30N02A datasheet by Excelliance MOS.
| Part number | EMF30N02A |
|---|---|
| Datasheet | EMF30N02A-ExcellianceMOS.pdf |
| File Size | 225.29 KB |
| Manufacturer | Excelliance MOS |
| Description | MOSFET |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1% 362°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2%.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMF30N02H | MOSFET |
| EMF30N02J | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMF30N02JS | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMF30N02P | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMF30C02G | MOSFET |
| EMF30C02K | N & P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMF30G02K | Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMF02P02H | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMF04P02H | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMF04P02V | P-Channel Logic Level Enhancement Mode Field Effect Transistor |