EMF30N02J
EMF30N02J is N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.)
30mΩ
5A
S Pb-Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C ID
TA = 70 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
LIMITS ±12 5 3.6 20 1.25 0.8
-55 to 150
UNIT V
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
Junction-to-Ambient3
RθJA
Junction-to-Lead4
RθJL
1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1％ 3100°C / W when mounted on a 1 in2 pad of 2 oz copper. 4 RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to...
