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EMF30G02K - MOSFET

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Part number EMF30G02K
Manufacturer Excelliance MOS
File Size 221.58 KB
Description MOSFET
Datasheet download datasheet EMF30G02K Datasheet
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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D1/D2 RDSON (MAX.) 30mΩ G1 G2 ID 5A S1 S2 Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMF30G02K LIMITS ±12 5 3.6 20 1.25 0.83 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ TYPICAL MAXIMUM 100 UNIT °C / W 2012/12/20 p.
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