EMF44P02V- P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMF44P02J- P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMF44P02JS- P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMF44P02P- P?Channel Logic Level Enhancement Mode Field Effect Transistor
EMF44P03J- P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMF44P03JS- P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMF02P02H- P-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMF44P02VA
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐20V
RDSON (MAX.)
44mΩ
ID
‐4.7A
G
S Pb‐Free Lead Plating & Halogen Free
Bottom View
S
D
D
S
D
GD D
PIN 1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID IDM PD Tj, Tstg
LIMITS ±12 ‐4.7 ‐3.5 ‐18.8 2.08 1.33
‐55 to 150
UNIT V
A
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.