Click to expand full text
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
RDSON (MAX.)
200mΩ
ID 1.7A
Pb‐Free Lead Plating & Halogen Free
ESD Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
VGS ID IDM PD Tj, Tstg
EMZBB0N10J
LIMITS ±20 1.7 1.1 6.8 1.25 0.5
‐55 to 150
UNIT V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐ Ambient
RJA
1Pulse width limited by maximum junction temperature.
EMZBB0N10J Datasheet
