FKBB8008
FKBB8008 is N-Channel MOSFET manufactured by FETek.
Description
The FKBB8008 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB8008 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
PRPAK3X3 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
Thermal Data
Symbol RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Rating 30
±12 50 32 150 125 50 31
-55 to 150 -55 to 150
Units V V A A A m J A W ℃ ℃
Typ. -----
Max. 65 4
Unit ℃/W ℃/W
Data and specifications subject to change without notice.
.fetek..tw Ver : A
FETek Technology Corp.
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol BVDSS
Parameter Drain-Source Breakdown Voltage
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
IDSS
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions VGS=0V , ID=250u A VGS=10V , ID=12A VGS=4.5V , ID=12A VGS=2.5V , ID=10A VGS=VDS , ID =250u A VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=12A VDS=0V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=12A
VDD=15V , VGS=10V , RG=1.5 ID=12A
VDS=15V , VGS=0V , f=1MHz
Min. Typ. Max....
