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FKUC2601 - P-Channel MOSFET

General Description

The FKUC2601 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKUC2601 meet the RoHS and Green Product requirement with full function reliability approved.

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Datasheet Details

Part number FKUC2601
Manufacturer FETek
File Size 541.05 KB
Description P-Channel MOSFET
Datasheet download datasheet FKUC2601 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FETek Technology Corp. FKUC2601 P-Ch 20V Fast Switching MOSFETs  Super Low Gate Charge  Green Device Available  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Product Summary BVDSS -20V RDSON 60mΩ ID -3.4A Description SOT23S Pin Configurations The FKUC2601 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKUC2601 meet the RoHS and Green Product requirement with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.