FKUC2609
FKUC2609 is P-Channel MOSFET manufactured by FETek.
Description
The FKUC2609 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKUC2609 meets the Ro HS and Green Product requirement with full function reliability approved.
SOT23S Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
10s
Steady State
-20 ±12
-3.5
-3.1
-2.8
-2.5
-15.5
-55 to 150
-55 to 150
Units
V V A A A W W ℃ ℃
Thermal Data
Symbol RθJA RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
Typ. -------
Max. 125 95 80
Unit ℃/W ℃/W ℃/W
Data and specifications subject to change without notice.
.fetek..tw Ver : A
FETek Technology Corp.
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise...
