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FNK0203EA - N-Channel Power MOSFET

General Description

The FNK0203EA uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = 20V,ID =10A RDS(ON) < 19mΩ @ VGS=2.5V RDS(ON) < 13mΩ @ VGS=4.5V ESD Rating: 2500V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number FNK0203EA
Manufacturer FNK
File Size 836.19 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK0203EA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The FNK0203EA uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. FNK0203EA General Features ● VDS = 20V,ID =10A RDS(ON) < 19mΩ @ VGS=2.5V RDS(ON) < 13mΩ @ VGS=4.