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FNK0203EB - N-Channel Power MOSFET

General Description

The FNK0203EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = 20V,ID =15A RDS(ON).

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Datasheet Details

Part number FNK0203EB
Manufacturer FNK
File Size 1.90 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK0203EB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK0203EB FNK N-Channel Enhancement Mode Power MOSFET Description The FNK0203EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =15A RDS(ON) <13.5mΩ @ VGS=2.5V R DS(ON) < 9.5mΩ @ VGS=4.