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FNK03N06E - N-Channel Power MOSFET

General Description

The FNK03N06E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =30V,ID =80A RDS(ON).

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Datasheet Details

Part number FNK03N06E
Manufacturer FNK
File Size 786.60 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK03N06E Datasheet

Full PDF Text Transcription for FNK03N06E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FNK03N06E. For precise diagrams, and layout, please refer to the original PDF.

FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N06E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can...

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y and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK03N06E General Features ● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V RDS(ON) <7.

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