Datasheet4U Logo Datasheet4U.com

FNK4620 - Complementary Enhancement Mode Field Effect Transistor

Description

The FNK4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in inverter and other applications.

Features

  • n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=10V) < 27mΩ (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 30mΩ (VGS = -10V) < 44mΩ (VGS = -4.5V) Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 D2 G2 S2 n-channel D1 G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current F TA=70°C Pulsed Drain Current B ID IDM 7.2 6.

📥 Download Datasheet

Datasheet Details

Part number FNK4620
Manufacturer FNK
File Size 1.42 MB
Description Complementary Enhancement Mode Field Effect Transistor
Datasheet download datasheet FNK4620 Datasheet

📁 Similar Datasheet

Other Datasheets by FNK

Full PDF Text Transcription

Click to expand full text
FNK4620 FNK4620 Complementary Enhancement Mode Field Effect Transistor General Description The FNK4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=10V) < 27mΩ (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 30mΩ (VGS = -10V) < 44mΩ (VGS = -4.5V) Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 D2 G2 S2 n-channel D1 G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current F TA=70°C Pulsed Drain Current B ID IDM 7.2 6.
Published: |