FNK FNK4620
The FNK4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.| Part No. | FNK4620 |
|---|---|
| Datasheet | FNK4620 Download |
| Manufacturer |  FNK |
| Description | Complementary Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 21mΩ (VGS=10V) < 27mΩ (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 30mΩ (VGS = -10V) < 44mΩ (VGS = -4.5V) Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 D2 G2 S2 n-channel D1 G1 S1 p-channelABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current F TA=70°C Pulsed Drain Current B ID IDM 7.2 6.2 64 Power Dissipation F Avalanche Current B TA=25°C TA=70°C Repetitive avalanche energy 0.3mH B PD IAR EAR 2 1.44 9 12 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Max p-channel -30 ±2
