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FNK6A - N-Channel Power MOSFET

General Description

The FNK6A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 19.5V,ID = 5A RDS(ON).

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Datasheet Details

Part number FNK6A
Manufacturer FNK
File Size 849.53 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK6A Datasheet

Full PDF Text Transcription for FNK6A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FNK6A. For precise diagrams, and layout, please refer to the original PDF.

FNK6A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with g...

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ogy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D1 G1 G2 D2 General Features ● VDS = 19.5V,ID = 5A RDS(ON) <23mΩ @ VGS=2.5V RDS(ON) < 16mΩ @ VGS=4.

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