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FNK6A - N-Channel Power MOSFET

Description

The FNK6A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 19.5V,ID = 5A RDS(ON).

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Datasheet Details

Part number FNK6A
Manufacturer FNK
File Size 849.53 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK6A Datasheet
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FNK6A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D1 G1 G2 D2 General Features ● VDS = 19.5V,ID = 5A RDS(ON) <23mΩ @ VGS=2.5V RDS(ON) < 16mΩ @ VGS=4.
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